Method for producing semiconductor device and semiconductor device

A semiconductor device having a memory cell comprising:

• a semiconductor substrate;
• a first gate electrode formed on the semiconductor substrate via a first insulating film;
• a second gate electrode formed on the semiconductor substrate via the second insulating film having a charge storage portion inside so as to be adjacent to the first gate electrode;
• a third insulating film interposed between the first gate electrode and the second gate electrode;
• a first source/drain region formed on a main surface of the semiconductor substrate;
• a first silicide layer formed in contact with an upper surface of the first source/drain region;
• a second silicide layer formed in contact with an upper surface of the first gate electrode;
• and
• a third silicide layer formed in contact with an upper surface of the second gate electrode,
• wherein the first to third silicide layers contain platinum, and
• an amount of platinum per unit area of a lower surface of the first silicide layer is larger than an amount of platinum per unit area of a lower surface of each of the second silicide layer and the third silicide layer.