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US 10,121,881 B2Granted
Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsLi-Wei Feng, Shih-Hung Tsai, Yi-Fan Li, Kun-Hsin Chen, Tong-Jyun Huang, Jyh-Shyang Jenq, Nan-Yuan Huang
Life of this patent
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Abstract
A semiconductor device preferably includes a substrate, a fin-shaped structure on the substrate, a buffer layer on the fin-shaped structure, and an epitaxial layer on the buffer layer. Preferably, the buffer layer is made of silicon germanium and including three or more than three elements. The buffer layer also includes dopants selected from the group consisting of P, As, Sb, Bi, C, and F.
Claims13
A semiconductor device, comprising:
- a substrate;
- an active region and a peripheral region defined on the substrate, wherein a top surface of the substrate on the peripheral region is higher than a top surface of the substrate on the active region;
- a fin-shaped structure on the substrate;
- a buffer layer on top of the fin-shaped structure, wherein the buffer layer comprises three or more than three elements;
- and
- an epitaxial layer on the buffer layer.
3 more elements
Dependencies are inferred from the claim text.