LDMOS finFET structures with multiple gate structures

A method of fabricating a field-effect transistor, the method comprising:

• forming a first fin and a second fin on a substrate;
• forming a first well that is arranged partially in the substrate and partially in the first fin, the first well having a first conductivity type;
• forming a second well that is arranged partially in the substrate, partially in the first fin, and partially in the second fin, the second well having a second conductivity type;
• forming a first source/drain region of the second conductivity type within the first well in the first fin;
• forming a second source/drain region of the second conductivity type within the second well in the second fin;
• forming a first gate structure that overlaps with a first portion of the first fin;
• forming a second gate structure that overlaps with a second portion of the first fin, the second gate structure is spaced along the first fin from the first gate structure;
• and
• forming a doped region arranged within the second well in the first fin between the first gate structure and the second gate structure, the doped region having the first conductivity type.