Vertical field effect transistor with metallic bottom region

A method for fabricating a semiconductor device, the method comprising:

• forming an etch stop layer over a substrate;
• forming a semiconductor fin over the etch stop layer;
• forming a first doped region on a first end the semiconductor fin;
• forming a second doped region on a second end the semiconductor fin;
• forming an extended contact on the second doped region and contacting the etch stop layer;
• forming a contact extension on the extended contact and through the etch stop layer;
• and
• forming a contact on a first doped region.

A semiconductor device comprising:

• a first end of a first doped region on a first end of the semiconductor fin;
• an etch stop layer on a second end of the first doped region;
• a second doped region on a second end of a semiconductor fin;
• and
• an extended contact on the second doped region and contacting the etch stop layer, wherein the extended contact comprises metal.