Semiconductor device and method for manufacturing semiconductor device
AssigneesRohm Co., Ltd., Lapis Semiconductor Co., Ltd.
InventorsAkihiro Hikasa, Kazusuke Kato
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Abstract
A semiconductor device according to the present invention includes: a semiconductor layer including a first conductivity type semiconductor region and a second conductivity type semiconductor region joined to the first conductivity type semiconductor region; and a surface electrode connected to the second conductivity type region on one surface of the semiconductor layer, including a first Al-based electrode, a second Al-based electrode, a barrier metal interposed between the first Al-based electrode and the second Al-based electrode, and a plated layer on the second Al-based electrode.
Claims20
A semiconductor device comprising:
- a semiconductor layer including a first conductivity type semiconductor region and a second conductivity type semiconductor region joined to the first conductivity type semiconductor region;
- a surface electrode connected to the second conductivity type region on one surface of the semiconductor layer, including a first Al-based electrode being in direct contact with the second conductivity type semiconductor region, a second Al-based electrode, a barrier metal interposed between the first Al-based electrode and the second Al-based electrode, and a plated layer on the second Al-based electrode;
- and
- an insulating layer being in direct contact with the second conductivity type semiconductor region,
- wherein the first Al-based electrode has an extending portion extending along an upper surface of the insulating layer and being in direct contact with the upper surface, and
- the extending portion of the first Al-based electrode has an end portion on the upper surface of the insulating layer.
A method for manufacturing a semiconductor device comprising:
- a step of forming an insulating layer on one surface of a semiconductor layer including a first conductivity type semiconductor region, and a second conductivity type semiconductor region joined to the first conductivity type semiconductor region so as to be directly contacted with the second conductivity type semiconductor region and expose a part of the second conductivity type semiconductor region;
- a step of forming a first Al-based electrode on the one surface of the semiconductor layer so as to be connected to the second conductivity type semiconductor region;
- a step of forming a barrier metal on the first Al-based electrode;
- a step of forming a second Al-based electrode on the barrier metal;
- and
- a step of forming a plated layer on the second Al-based electrode by electroless plating,
- wherein in the step of forming the first Al-based electrode, the first Al-based electrode is formed so as to have an extending portion extending along an upper surface of the insulating layer and be in direct contact with the upper surface.
Dependencies are inferred from the claim text.