Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorTatsuya Naito
Life of this patent
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Abstract
Provided is a semiconductor device having an RC-IGBT structure, the semiconductor device comprising an FWD (Free Wheel Diode) region and an IGBT (Insulated Gate Bipolar Transistor) region. Provided is a semiconductor device comprising: a semiconductor substrate; a transistor section formed on the semiconductor substrate; a diode section formed on the semiconductor substrate and including a lifetime killer at a front surface side of the semiconductor substrate; a gate runner provided between the transistor section and the diode section and electrically connected to a gate of the transistor section.
Claims27
A semiconductor device comprising:
- a semiconductor substrate;
- a transistor section formed on the semiconductor substrate;
- a diode section formed on the semiconductor substrate and including a lifetime killer at a front surface side of the semiconductor substrate;
- and
- a gate runner provided between the transistor section and the diode section and electrically connected to a gate of the transistor section,
- a well region having a conductivity type different from that of the semiconductor substrate and formed below the gate runner such that the well region overlaps the transistor section, the transistor section thereby having an overlapping region and a non-overlapping region,
- wherein the semiconductor substrate includes the lifetime killer in a substantially entire region below the gate runner at the front surface side of the semiconductor substrate.
Dependencies are inferred from the claim text.