BJT structure design for 14nm FinFET device

A fin-type bipolar semiconductor device comprising:

• a base region comprising a first portion in a semiconductor substrate and a first semiconductor fin adjacent to the first portion and on the first portion;
• a collector region comprising a second portion in the semiconductor substrate and a second semiconductor fin adjacent to the second portion and on the second portion, the second portion adjacent to the first portion;
• an emitter region comprising a third portion in the semiconductor substrate and a third semiconductor fin adjacent to the third portion and on the third portion, the third portion adjacent to the first portion and forming with the first portion an emitter junction in the semiconductor substrate;
• a first liner oxide layer on the base region, the collector region, and the emitter region;
• a filler material layer on the first liner oxide layer;
• a second liner oxide layer on the filler material layer;
• wherein the second portion is not adjacent to the third portion, and
• wherein the first, second, and third semiconductor fins are physically separated from each other by the first liner oxide layer and the filler material layer.