Method of manufacturing semiconductor devices with transistor cells and semiconductor device

A micro electromechanical device comprising:

• a micro electromechanical structure formed in a semiconductor portion;
• first reinforcement stripes in the semiconductor portion, wherein first longitudinal axes of the first reinforcement stripes are parallel to a first surface of the semiconductor portion;
• and
• second reinforcement stripes between the first reinforcement stripes and the first surface, wherein second longitudinal axes of the second reinforcement stripes are parallel to the first surface,
• wherein the second longitudinal axes are orthogonal to the first longitudinal axes.

A method of manufacturing a semiconductor device, the method comprising:

• forming first reinforcement stripes on a process surface of a base substrate;
• forming a first epitaxial layer on the process surface, the first epitaxial layer covering the first reinforcement stripes;
• forming second reinforcement stripes on the first epitaxial layer;
• forming a second epitaxial layer on exposed portions of the first epitaxial layer, the second epitaxial layer covering the second reinforcement stripes;
• forming semiconducting portions of transistor cells in or portions of micro electromechanical structures from the second epitaxial layer;
• and
• removing at least a portion of the base substrate from a side opposite to the first epitaxial layer.

A method of manufacturing a semiconductor device, the method comprising:

• forming dicing stripes on a process surface of a base substrate;
• forming an epitaxial layer on the process surface, the epitaxial layer covering the dicing stripes;
• forming semiconducting portions of transistor cells in portions of micro electromechanical structures from the epitaxial layer;
• forming dicing trenches in a vertical projection of the dicing stripes and separating semiconductor portions of semiconductor dies;
• attaching an auxiliary carrier at a front side opposite to the base substrate;
• removing the base substrate;
• and
• separating the semiconductor dies by at least partially removing the dicing stripes.