Elongated semiconductor structure planarization

A method comprising:

• epitaxially growing first portions of a plurality of elongated semiconductor structures on a semiconductor substrate, the elongated semiconductor structures running perpendicular to the substrate;
• forming a gate layer on the substrate, the gate layer being formed over the elongated semiconductor structures;
• performing a planarization process on the gate layer and the elongated semiconductor structures;
• after the planarization process, recessing the gate layer;
• and
• epitaxially growing second portions of the plurality of elongated semiconductor structures, the second portions comprising a different material than the first portions, wherein junctions between the first portions and the second portions are offset from an edge of the gate layer.