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US 10,121,855 B2Granted
Stacked nanowire semiconductor device
AssigneeInternational Business Machines Corporation
InventorsMichael A. Guillorn, William L. Nicoll, Hanfei Wang
Life of this patent
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Abstract
A method for forming a semiconductor device comprising forming a stack of nanowires, the stack including a first nanowire having a first length, and a second nanowire having a second length, the second nanowire arranged above the first nanowire, forming a sacrificial gate stack on the stack of nanowires, growing a source/drain region on the first, second nanowires, removing the sacrificial gate stack to expose channel regions of the first and second nanowires, and forming a gate stack over the channel regions.
Claims4
A semiconductor device comprising:
- a stack of nanowires, the stack including:
- a first nanowire having a first length;
- a second nanowire having a second length, the second nanowire arranged above the first nanowire, the first length being greater than the second length;
- and
- a third nanowire having a third length, the third nanowire arranged above the second nanowire, the third length being different from the first and second lengths;
- a gate stack arranged over channel regions of the first nanowire, the second nanowire, and the third nanowire;
- a first source/drain region attached on ends of the first nanowire;
- a second source/drain region attached on ends of the second nanowire;
- a third source/drain region attached on ends of the third nanowire, wherein the first source/drain region, the second source/drain region and the third source/drain region are formed of different materials;
- a spacer formed on a portion of top surfaces of each of the first, second, and third nanowires, continuing in between a portion of each of the first, second, and third nanowires, and continuing on a portion of bottom surfaces of each of the first, second, and third nanowires.
7 more elements
Dependencies are inferred from the claim text.