Electronic device including side gate and two-dimensional material channel and method of manufacturing the electronic device

An electronic device comprising:

• a first semiconductor device;
• and
• a second semiconductor device,
• wherein each of the first and second semiconductor devices includes,
• a substrate;
• an energy barrier forming layer on the substrate, wherein one energy barrier forming layer of the first semiconductor device or the energy barrier forming layer of the second semiconductor device includes a p-type material layer, and the other energy barrier forming layer of the first semiconductor device or the energy barrier forming layer of the second semiconductor device includes an n-type material layer;
• an upper channel material layer on the substrate, the upper channel material layer including a two-dimensional (2D) material, the upper channel material layer at least partially covering an upper surface of the energy barrier forming layer;
• a lower channel material layer on the substrate;
• a gate electrode that covers the upper channel material layer and the energy barrier forming layer, the gate electrode including a side gate electrode portion that faces a side surface of the energy barrier forming layer;
• a first terminal on the substrate;
• and
• a second terminal on the upper channel material layer,
• wherein the first terminals or the second terminals of the first and second semiconductor devices are connected to each other, and the gate electrodes of the first and second semiconductor devices are connected to each other,
• wherein the lower channel material layer is in direct contact with only the first terminal of the first terminal and the second terminal and is separated from the second terminal, and
• wherein the upper channel material layer is in direct contact with only the second terminal of the first terminal and the second terminal and is separated from the first terminal.

An electronic device comprising:

• a substrate;
• an energy barrier forming layer on the substrate;
• an upper channel material layer on the substrate, the upper channel material layer including a two-dimensional (2D) material, the upper channel material layer at least partially covering an upper surface of the energy barrier forming layer;
• a gate insulating layer on the substrate;
• a gate electrode that covers the upper channel material layer and the energy barrier forming layer, the gate electrode including a side gate electrode portion that faces a side surface of the energy barrier forming layer;
• a drain electrode on the substrate;
• and
• a source electrode on the upper channel material layer,
• wherein the gate insulating layer includes a side portion that covers a side surface of the energy barrier forming layer and the side gate electrode portion is direct contact with the side portion of the gate insulating layer;
• and
• wherein the upper channel material layer is in direct contact with only the source electrode of the source electrode and the drain electrode.

A method of manufacturing an electronic device, the method comprising:

• forming an energy barrier forming layer on a substrate;
• forming, on the substrate, an upper channel material layer that covers an upper surface of the energy barrier forming layer, the upper channel material layer including a two-dimensional (2D) material layer;
• forming a lower channel material layer on the substrate;
• forming a gate electrode that covers the energy barrier forming layer and the upper channel material layer, such that a portion of the gate electrode faces a side surface of the energy barrier forming layer;
• forming a drain electrode on the substrate;
• and
• forming a source electrode on the upper channel material layer,
• wherein the lower channel material layer is in direct contact with only the drain electrode of the source electrode and the drain electrode and is separated from the source electrode;
• and
• wherein the upper channel material layer is in direct contact with only the source electrode of the source electrode and the drain electrode and is separated from the drain electrode.