Power semiconductor device and method of fabricating the same

A power semiconductor device comprising:

• a gate electrode disposed in a trench of a substrate;
• a body region having a first conductivity type disposed on one side of the gate electrode in the substrate;
• a source region having a second conductivity type disposed adjacent to the gate electrode in the body region having a first conductivity type;
• a floating region having a first conductivity type disposed on the other side of the gate electrode in the substrate;
• an edge doped region having a first conductivity type spaced apart from the floating region having a first conductivity type and electrically connected to the source region in the substrate;
• an edge junction isolation region having a second conductivity type interposed between the floating region having a first conductivity type and the edge doped region having a first conductivity type in the substrate;
• and
• a drift region having a second conductivity type disposed below the floating region having a first conductivity type, the edge doped region having a first conductivity type, and the edge junction isolation region having a second conductivity type,
• wherein the doping concentration of a second conductivity type in the edge junction isolation region is higher than the doping concentration of a second conductivity type in the drift region.