Methods of fabricating a semiconductor structure

A method of fabricating a semiconductor structure, comprising:

• forming a first recess extending from an upper surface toward a lower surface of a material, the first recess having a first depth;
• forming a second recess extending from the upper surface toward the lower surface, the second recess having a second depth less than the first depth;
• forming a first insulating layer in the first recess and the second recess;
• forming a first conducting layer in the first recess and the second recess and over the first insulating layer;
• forming a second insulating layer over the first conducting layer and in the first recess and the second recess;
• forming a second conducting layer over the second insulating layer and in the first recess and the second recess, the second conducting layer isolated from the first conducting layer with the second insulating layer;
• thinning the material from the lower surface to expose the first insulating layer, the first conducting layer, the second insulating layer, and the second conducting layer in the first recess and the first insulating layer and the first conducting layer in the second recess;
• forming a metal layer in direct contact with a portion of the upper surface of the material, with the first insulating layer, the first conducting layer, the second insulating layer, and the second conducting layer in the first recess, and with the second conducting layer in the second recess;
• and
• forming another metal layer in direct contact with a portion of the lower surface of the material, with the first insulating layer, the first conducting layer, the second insulating layer, and the second conducting layer in the first recess, and with the first insulating layer and the first conducting layer in the second recess.