Galvanic isolation device

A galvanic isolation device comprising:

• a first integrated circuit (IC) die having a top surface, an opposite bottom surface, and a side surface therebetween;
• first communication circuitry formed in a circuit layer of the first IC die;
• first conductive plates formed on the first IC die proximate the top surface, the first conductive plates being coupled to the first communication circuitry;
• a dielectric isolation layer positioned on top of a portion of the top surface of the first IC die, such that the dielectric isolation layer completely covers the first conductive plates;
• second conductive plates juxtaposed with the first conductive plates but separated from the first conductive plates by the dielectric isolation layer, such that the first conductive plates and the second conductive plates form capacitors, the second conductive plates being arranged for coupling to second communication circuitry;
• an attachment material selectively placed between the first die and a second IC die such that air gaps are formed between adjacent ones of the capacitors.

A galvanic isolation device comprising:

• an integrated circuit (IC) die having a top surface, an opposite bottom surface, and a side surface therebetween;
• a first communication circuit formed in a circuit layer of the IC die;
• a first conductive plate formed on the IC die proximate the top surface, the first conductive plate being coupled to the first communication circuit;
• a dielectric isolation layer positioned on top of a portion of the top surface of the IC die, such that the dielectric isolation layer completely covers the first conductive plate and also covers an end surface of the IC die;
• and
• a second conductive plate juxtaposed with the first conductive plate but separated from the first conductive plate by the dielectric isolation layer, such that the first conductive plate and the second conductive plate form a capacitor, the second conductive plate being arranged for coupling to a second communication circuit.

A galvanic isolation device comprising:

• an integrated circuit (IC) die having a top surface, an opposite bottom surface, and a side surface therebetween;
• a first communication circuit formed in a circuit layer of the IC die;
• a first conductive plate formed on the IC die proximate the top surface, the first conductive plate being coupled to the first communication circuit;
• a dielectric isolation layer positioned on top of a portion of the top surface of the IC die, such that the dielectric isolation layer completely covers the first conductive plate and extends beyond a portion of the side surface of the IC die;
• and
• a second conductive plate juxtaposed with the first conductive plate but separated from the first conductive plate by the dielectric isolation layer, such that the first conductive plate and the second conductive plate form a capacitor, the second conductive plate being arranged for coupling to a second communication circuit.