Resistor structure with high resistance based on very thin semiconductor layer
AssigneeGlobalfoundries Inc.
InventorsAlban Zaka, Ignasi Cortes Mayol, Tom Herrmann, El Mehdi Bazizi, John Morgan
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Abstract
The present disclosure provides resistor structures in sophisticated integrated circuits on the basis of an SOI architecture, wherein a very thin semiconductor layer, typically used for forming fully depleted SOI transistors, may be used as a resistor body. In this manner, significantly higher sheet resistance values may be achieved, thereby providing the potential for implementing high ohmic resistors into sophisticated integrated circuits.
Claims19
An on-chip resistor structure, comprising
- a resistor body comprising a semiconductor layer having a thickness of approximately 15 nm or less, said semiconductor layer being formed on a buried insulating layer;
- at least one semiconductor region formed on said resistor body;
- and
- a first contact region and a second contact region positioned adjacent to and in electrical contact with said resistor body and being formed at least partially of a semiconductor material, said resistor body being laterally interposed between said first and second contact regions.
The on-chip resistor structure 1, further comprising one or more front electrode structures formed on portions of said semiconductor layer.
A semiconductor device, comprising:
- a fully depleted field effect transistor formed in and on a first portion of a semiconductor layer formed on a buried insulating layer, said fully depleted field effect transistor comprising raised drain and source regions;
- and
- a resistor structure comprising a resistor body formed on a second portion of said semiconductor layer, said resistor structure comprising raised contact regions, wherein a configuration of said raised drain and source regions and a configuration of said contact regions are equivalent.
An on-chip resistor structure, comprising
- a resistor body comprising a semiconductor layer having a thickness of approximately 15 nm or less, said semiconductor layer being formed on a buried insulating layer;
- a first contact region and a second contact region positioned adjacent to and in electrical contact with said resistor body and being formed at least partially of a semiconductor material, said resistor body being laterally interposed between said first and second contact regions;
- and
- a back electrode structure formed below said semiconductor layer, said back electrode structure comprising a portion of said buried insulating layer.
Dependencies are inferred from the claim text.