Semiconductor structure and the method of making the same

A method for forming a semiconductor structure, comprising:

• providing a substrate, a memory region and a transistor region are defined thereon;
• forming an insulating layer on the substrate;
• forming a 2D material layer located on the insulating layer and simultaneously located within the memory region and within the transistor region, wherein a portion of the 2D material layer within the transistor region is a channel region of a transistor, the transistor is disposed on the channel region within the transistor region;
• and
• forming a resistive random access memory (RRAM) within the memory region, the RRAM comprises a lower electrode layer, a resistive switching layer and an upper electrode layer sequentially located on a portion of the 2D material layer in the memory region, wherein the lower electrode layer contacts the 2D material layer directly, and the RRAM is electrically connected to the channel region.