Light-emitting device and method of forming the same

A light-emitting array comprising:

• a plurality of light-emitting devices, each light-emitting device comprising:
• an active layer;
• a first semiconductor layer of a first conductivity type, the first semiconductor layer in physical contact with the active layer;
• a second semiconductor layer of a second conductivity type, the second semiconductor layer in physical contact with the active layer and opposite the first semiconductor layer;
• a first electrode in physical contact with a first lateral side of the first semiconductor layer,
• a second electrode in physical contact with a second lateral side of the first semiconductor layer, the second lateral side of the first semiconductor layer being different from the first lateral side of the first semiconductor layer;
• and
• a third electrode in physical contact with the second semiconductor layer;
• and
• one or more interconnecting layers, wherein:
• the first electrode and the second electrode are physically isolated from a surface side of the first semiconductor layer joining the first lateral side and the second lateral side, the surface side being configured to transmit light generated by the light-emitting device;
• and
• each of the one or more interconnecting layers is in contact with a first light-emitting device and a second light-emitting device of the plurality of light-emitting devices.

A method of forming a light-emitting device, the method comprising:

• forming an active layer;
• forming a first semiconductor layer of a first conductivity type so that the first semiconductor layer is in physical contact with the active layer;
• forming a second semiconductor layer of a second conductivity type so that the second semiconductor layer is in physical contact with the active layer and opposite the first semiconductor layer;
• forming a first electrode in physical contact with a first lateral side of the first semiconductor layer;
• forming a second electrode in physical contact with a second lateral side of the first semiconductor layer, the second lateral side of the first semiconductor layer being different from the first lateral side of the first semiconductor layer;
• and
• forming a third electrode so that the third electrode is in physical contact with the second semiconductor layer, thereby forming the light-emitting device, wherein the first electrode and the second electrode are physically isolated from a surface side of the first semiconductor layer joining the first lateral side and the second lateral side, the surface side being configured to transmit light generated by the light-emitting device.

A method of forming a light-emitting array, the method comprising:

• forming a plurality of light-emitting devices, wherein the forming of each light-emitting device comprises:
• forming an active layer;
• forming a first semiconductor layer of a first conductivity type so that the first semiconductor layer is in physical contact with the active layer;
• forming a second semiconductor layer of a second conductivity type so that the second semiconductor layer is in physical contact with the active layer and opposite the first semiconductor layer;
• forming a first electrode in physical contact with a first lateral side of the first semiconductor layer;
• forming a second electrode in physical contact with a lateral second side of the first semiconductor layer, the second lateral side of the first semiconductor layer being different from the first lateral side of the first semiconductor layer;
• and
• forming a third electrode so that the third electrode is in physical contact with the second semiconductor layer, thereby forming the light-emitting device;
• and
• forming one or more interconnecting layers so that each of the one or more interconnecting layers is in contact with a first light-emitting device and a second light-emitting device of the plurality of light-emitting devices, wherein the first electrode and the second electrode are physically isolated from a surface side of the first semiconductor layer joining the first lateral side and the second lateral side, the surface side being configured to transmit light generated by the light-emitting device.