Biased backside illuminated sensor shield structure

A method of forming a device, the method comprising:

• forming a first opening through a first substrate, the first substrate having a photosensitive region, the photosensitive region comprising a plurality of pixels, the first substrate having first metallization layers on a first side, the first substrate being bonded to a second substrate, the second substrate having second metallization layers on a first side of the second substrate, the first metallization layers and the second metallization layers being interposed between the first substrate and the second substrate;
• forming an isolation layer on a second side of the first substrate and along sidewalls of the first opening;
• forming a second opening through the isolation layer and to a first conductive element in the second metallization layers;
• forming a first conductive material in the first opening and the second opening, thereby forming a first via;
• forming a cap layer over the isolation layer on the second side of the first substrate;
• patterning the cap layer to expose the first via;
• forming a conductive layer over the cap layer, the conductive layer extending through the cap layer to the first via;
• and
• patterning the conductive layer and the cap layer to form a grid over the photosensitive region and a connector over the first via.

A method of forming a device, the method comprising:

• forming a first opening and a second opening through a first substrate, the first substrate having a photosensitive region, the photosensitive region comprising a plurality of pixels;
• forming an isolation layer on a backside of the first substrate and along sidewalls of the first opening and the second opening;
• forming a third opening and a fourth opening through the isolation layer along a bottom of the first opening and the second opening, respectively, the third opening and the fourth opening exposing a first conductive element, the first substrate being interposed between the isolation layer and the first conductive element;
• forming a first via in the first opening and a second via in the second opening;
• forming a cap layer over the isolation layer on the backside of the first substrate;
• patterning the cap layer to expose the first via and the second via;
• forming a conductive layer over the cap layer, the conductive layer extending through the cap layer to the first via and the second via;
• and
• patterning the conductive layer and the cap layer to form a grid over the photosensitive region and a connector over the first via and the second via.