Imaging device and method of manufacturing imaging device

An imaging device comprising:

• a plurality of pixels disposed two-dimensionally, each of the plural pixels including:
• a photoelectric conversion unit provided in a first semiconductor region of a first conductivity type;
• a transfer transistor including a second semiconductor region of a second conductivity type which is provided in the first semiconductor region and to which charge generated in the photoelectric conversion unit is transferred;
• a third semiconductor region of the first conductivity type provided in a portion deeper than the second semiconductor region and having an impurity concentration higher than an impurity concentration of the first semiconductor region;
• and
• a counter doped region provided around the second semiconductor region,
• wherein at least a part of the third semiconductor region and at least a part of the counter doped region are overlapped with a gate electrode of the transfer transistor in a plan view, and
• a first overlap of the counter doped region with respect to the gate electrode is larger than a second overlap of the third semiconductor region with respect to the gate electrode.