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US 10,121,810 B2Granted
Imaging apparatus and electronic apparatus including shielding members between photoelectric conversion regions
AssigneeSony Corporation
InventorYusuke Tanaka
Life of this patent
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Abstract
There is provided a solid-state imaging apparatus including a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate, element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, and shielding members formed on upper surfaces of the element isolation regions. The element isolation regions have high impurity concentration regions of a high impurity concentration connected to at least a part of the shielding members.
Claims14
An imaging apparatus comprising:
- a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate;
- element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, the element isolation regions including high impurity concentration semiconductor regions having a higher impurity concentration than other semiconductor regions within the element isolation regions;
- and
- shielding members formed between the plurality of photoelectric conversion regions in a cross-sectional view,
- wherein at least one of the shielding members is disposed over the rear surface side corresponding to the high impurity concentration semiconductor regions in the cross-sectional view, and
- wherein the high impurity concentration semiconductor regions of the element isolation regions are at least one of directly connected to at least a part of the shielding members or indirectly connected to at least the part of the shielding members via a conductive material different from a material of the shielding members.
3 more elements
An electronic apparatus, comprising:
- an imaging apparatus including:
- a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate;
- element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, the element isolation regions including high impurity concentration semiconductor regions having a higher impurity concentration than other semiconductor regions within the element isolation regions;
- and
- shielding members formed between the plurality of photoelectric conversion regions in a cross-sectional view,
- wherein at least one of the shielding members is disposed over the rear surface side corresponding to the high impurity concentration semiconductor regions in the cross-sectional view, and
- wherein the high impurity concentration semiconductor regions of the element isolation regions are at least one of directly connected to at least a part of the shielding members or indirectly connected to at least the part of the shielding members via a conductive material different from a material of the shielding members.
4 more elements
Dependencies are inferred from the claim text.