Semiconductor devices and image sensors

A semiconductor device, comprising:

• a plurality of first device patterns on a device region of a semiconductor substrate and a plurality of first dummy patterns on a dummy region of the semiconductor substrate;
• a plurality of second device patterns on the device region of the semiconductor substrate;
• and
• a plurality of second dummy patterns and at least one second sample dummy pattern on the dummy region of the semiconductor substrate,
• wherein the second sample dummy pattern includes a first sidewall, a second sidewall facing the first sidewall, a first point on the first sidewall, and a second point on the second sidewall, and
• wherein the at least one second sample dummy pattern and an adjacent first dummy pattern of the plurality of first dummy patterns in relation to the second sample dummy pattern are spaced apart from each other at a first horizontal distance in a direction parallel to a line connecting the first point and the second point, the first horizontal distance greater than a second horizontal distance in the direction between one second device pattern of the plurality of second device patterns and an adjacent first device pattern of the plurality of first device patterns in relation to the one second device pattern.

An image sensor, comprising:

• a plurality of actual light-shield patterns on an actual pixel region of a semiconductor substrate and a plurality of dummy light-shield patterns on a dummy pixel region of the semiconductor substrate;
• a plurality of first actual color filters on the actual pixel region of the semiconductor substrate;
• and
• a plurality of first dummy color filters and at least one first sample dummy color filter on the dummy pixel region of the semiconductor substrate,
• wherein the at least one first sample dummy color filter includes a first sidewall, a second sidewall facing the first sidewall, a first point on the first sidewall, and a second point on the second sidewall, and
• wherein the at least one first sample dummy color filter and an adjacent dummy light-shield pattern of the plurality of dummy light-shield patterns in relation to the at least one first sample dummy color filter are spaced apart from each other at a first horizontal distance in a first direction parallel to a line connecting the first point and the second point, the first horizontal distance greater than a second horizontal distance in the first direction between one first actual color filter of the plurality of first actual color filters and an adjacent actual light-shield pattern of the plurality of actual light-shield patterns in relation to the one first actual color filter.