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US 10,121,803 B2Granted
Semiconductor device having auxiliary patterns
AssigneeSamsung Display Co., Ltd.
InventorsChang-Soo Pyon, Min-Ho Ko, Hyun-Chol Bang, Kwang-Min Kim, Won-Kyu Kwak
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Abstract
A semiconductor device includes a substrate, a first conductive layer on the substrate and including a main pattern, and substantially symmetrical auxiliary patterns extending from two sides of the main pattern, an insulating layer on the substrate and the first conductive layer, and a second conductive layer on the insulating layer and overlapping at least a portion of the main pattern and the auxiliary patterns.
Claims6
A semiconductor device comprising:
- a substrate;
- a first conductive layer on the substrate and comprising:
- a main pattern;
- substantially symmetrical first auxiliary patterns extending from two sides of the main pattern and electrically connected to the main pattern;
- and
- substantially symmetrical second auxiliary patterns extending from two other sides of the main pattern;
- an insulating layer on the substrate and the first conductive layer;
- and
- a second conductive layer on the insulating layer and overlapping the main pattern and at least a portion of the first auxiliary patterns and the second auxiliary patterns,
- wherein one of the first auxiliary patterns is coupled to a wiring and another of the first auxiliary patterns has an isolated terminal end.
7 more elements
A semiconductor device comprising:
- a substrate;
- a first conductive layer on the substrate and comprising:
- a main pattern;
- substantially symmetrical first auxiliary patterns extending from two sides of the main pattern and electrically connected to the main pattern;
- and
- substantially symmetrical second auxiliary patterns extending from two other sides of the main pattern;
- an insulating layer on the substrate and the first conductive layer such that the first conductive layer is between the substrate and the insulating layer;
- and
- a second conductive layer on the insulating layer and overlapping the main pattern and at least a portion of the first auxiliary patterns and the second auxiliary patterns,
- wherein at least one of the first auxiliary patterns extending from one of the two sides of the main pattern and at least one of the second auxiliary patterns extending from one of the two other sides of the main pattern extends beyond an edge of the second conductive layer.
7 more elements
Dependencies are inferred from the claim text.