Semiconductor device including stacked structure

A semiconductor device comprising:

• a substrate;
• a stacked structure on the substrate,
• the stacked structure including units stacked on top of each other in a direction perpendicular to a top surface of the substrate, the stacked structure including a hole passing through the stacked structure and having a bowing region,
• the units including first units and a second unit between the first units,
• each of the first units including a first gate and a first interlayer insulating layer on the first gate,
• the second unit including a plurality of second gates and a plurality of second interlayer insulating layers alternately stacked on top of each other,
• the second unit opposes at least a portion of the bowing region, and
• a ratio of a thickness of one of the plurality of second interlayer insulating layers with respect to a thickness of one of the plurality of second gates is different from a ratio of a thickness of the first interlayer insulating layer with respect to a thickness of the first gate;
• and
• a vertical structure in the hole.

A semiconductor device comprising:

• a substrate;
• a stacked structure on the substrate,
• the stacked structure including stacked regions stacked on top of each other in a direction perpendicular to a top surface of the substrate,
• the stacked structure including a hole passing through the stacked structure,
• the stacked regions including first stacked regions and second stacked region between the first stacked regions,
• each of the first stacked regions including a plurality of first layers and a plurality of first interlayer insulating layers alternately stacked on top of each other,
• the second stacked region including a plurality of second layers and a plurality of second interlayer insulating layers alternately stacked on top of each other, and
• a ratio of a thickness of one of the plurality of second interlayer insulating layers with respect to a thickness of one of the plurality of second layers is different from a ratio of a thickness of one of the plurality of first interlayer insulating layers with respect to a thickness of one of the plurality of first layers,
• the plurality of first layers and the plurality of second layers being a plurality of first gates and a plurality of second gates, respectively, or a plurality of first sacrificial layers and a plurality of second sacrificial layers, respectively;
• and
• a vertical structure in the hole.