Semiconductor device having supporters and method of manufacturing the same

A semiconductor device, comprising:

• a plurality of via structures on a substrate;
• an etch stop layer on the via structures;
• a plurality of storage electrodes passing through the etch stop layer and in contact with upper surfaces of the via structures, each of the storage electrodes including
• a first portion,
• a second portion on the first portion,
• a third portion on the second portion,
• an upper surface, and
• at least one sidewall;
• a first supporter configured to connect first portions of the storage electrodes;
• a second supporter configured to connect second portions of the storage electrodes;
• a third supporter configured to connect third portions of the storage electrodes;
• a capacitor dielectric layer configured to conformally cover
• an upper surface of the first supporter,
• a lower surface of the first supporter,
• an upper surface of the second supporter,
• a lower surface of the second supporter,
• an upper surface of the third supporter,
• a lower surface of the third supporter,
• at least one upper surface of the storage electrodes, and
• at least one sidewall of the storage electrodes;
• and
• a lower plate electrode on the capacitor dielectric layer;
• wherein the first supporter, the second supporter, and the third supporter are in direct contact with at least one sidewall of at least one of the storage electrodes, and wherein a portion of the capacitor dielectric layer conformally covering both the upper surface of the third supporter and the upper surfaces of the storage electrodes has a planar profile,
• wherein the first supporter is spaced apart from the etch stop layer,
• wherein the lower plate electrode includes a third portion configured to fill a space at least partially defined by the upper surface of the second supporter, the lower surface of the third supporter, and at least one sidewall of the storage electrodes.

A semiconductor device, comprising:

• a plurality of storage electrodes on a substrate, each of the storage electrodes extending substantially orthogonal to a surface of the substrate, each of the storage electrodes including an upper surface that is a substrate-distal surface;
• and
• at least three supporters extending substantially parallel to the surface of the substrate, each supporter of the at least three supporters configured to couple each of the storage electrodes;
• an etch stop layer configured to cover upper surfaces of via structures on the substrate;
• and
• a lower plate electrode filling spaces between the at least three supporters,
• wherein the storage electrodes pass through the etch stop layer and are in contact with upper surfaces of the via structures,
• wherein each supporter of the at least three supporters is spaced apart from the etch stop layer.