Semiconductor device and method for fabricating the same

Abstract

A semiconductor device includes a semiconductor substrate having a first region and a second region, a plurality of first semiconductor fins in the first region, a plurality of second semiconductor fins in the second region, a first solid-state dopant source layer within the first region on the semiconductor substrate, a first insulating buffer layer on the first solid-state dopant source layer, a second solid-state dopant source layer within the second region on the semiconductor substrate, a second insulating buffer layer on the second solid-state dopant source layer and on the first insulating buffer layer, a first fin bump in the first region, and a second fin bump in the second region. The first fin bump includes a first sidewall spacer and the second fin bump comprises a second sidewall spacer. The first sidewall spacer has a structure that is different from that of the second sidewall spacer.

Dependencies are inferred from the claim text.