Self-aligned source/drain contacts

A semiconductor structure fabrication method comprising:

• forming first lower source and drain (S&D) regions within or upon a first active area of a semiconductor substrate;
• forming second lower S&D regions within or upon a second active area of the semiconductor substrate;
• forming a first replacement metal gate (RMG) structure upon the semiconductor substrate between the first lower source region and the first lower drain region;
• forming a second RMG structure upon the semiconductor substrate between the second lower source region and the second lower drain region;
• forming a first raised source region upon the first lower source region adjacent to the first RMG structure and forming a first raised drain region upon the first lower drain region adjacent to the first RMG structure;
• forming a second raised source region upon the second lower source region adjacent to the second RMG structure and forming a second raised drain region upon the second lower drain region adjacent to the second RMG structure;
• recessing the first raised source region and recessing the first raised drain region forming first area contact trenches;
• capping the first area contact trenches;
• recessing the second raised source region and recessing the second raised drain region forming second area contact trenches;
• forming second self-aligned contacts upon the second area contact trenches;
• capping the second self-aligned contacts;
• exposing the first area contract trenches;
• forming first self-aligned contacts upon the exposed first area contact trenches.