Pitch scalable active area patterning structure and process for multi-channel fin FET technologies

A multi-channel finFET comprising:

• a hard mask layer;
• a semiconductor layer having areas of a first semiconductor material and a second semiconductor material in contact with the hard mask layer, wherein the semiconductor layer having its longest dimension in an x-y direction;
• a plurality of fins of desired dimension in the first semiconductor material and the second semiconductor material, wherein the plurality of fins have their longest dimension in a z-direction, wherein the z-direction is normal to the x-y plane;
• a first conformal coating layer on the plurality of fins;
• a second conformal coating layer on the first conformal coating layer;
• a third conformal coating layer on the second conformal coating layer,
• wherein the first conformal coating layer comprises a thickness of 5 to 20 nanometers,
• wherein the second conformal coating layer comprises a thickness of 1 to 5 nanometers,
• wherein the first conformal coating layer and the second conformal coating layer are different materials selected from silicon oxide, silicon nitride, SiBCN (silicon borocarbon nitride), and SiOCN (silicon oxycarbon nitride).