Semiconductor apparatus
AssigneeRenesas Electronics Corporation
InventorsJunichi Nita, Kazutaka Suzuki, Takahiro Korenari, Yoshimasa Uchinuma
Life of this patent
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Abstract
A semiconductor apparatus includes a first area, a first transistor being formed in two or more divided areas of the first area, and a second area, a second transistor being formed in two or more divided areas of the second area. The number of areas of the second area is greater than the number of areas of the first area, the divided areas of the first area and the second area are alternately arranged, and the gate pad of the first transistor and the gate pad of the second transistor are formed in the second area.
Claims17
A semiconductor apparatus comprising:
- a first area, a first transistor being formed in two or more divided areas of the first area;
- and
- a second area, a second transistor being formed in two or more divided areas of the second area, wherein
- the number of areas of the second area is greater than the number of areas of the first area,
- the divided areas of the first area and the second area are alternately arranged, and
- a first source pad connected to a source of the first transistor is formed in the first area, and a second source pad connected to a source of the second transistor is formed in the second area.
A semiconductor apparatus comprising:
- a first area, a first transistor being formed in two or more divided areas of the first area;
- and
- a second area, a second transistor being formed in two or more divided areas of the second area,
- wherein the number of areas of the second area is greater than the number of areas of the first area,
- wherein the divided areas of the first area and the second area are alternately arranged, and
- wherein each of the first and second transistors comprise a trench transistor, and a current flowing from a source of the first transistor is output from a source of the second transistor via a substrate area of the semiconductor apparatus.
A semiconductor apparatus comprising:
- a first area, a first transistor being formed in two or more divided areas of the first area;
- and
- a second area, a second transistor being formed in two or more divided areas of the second area,
- wherein the number of areas of the second area is greater than the number of areas of the first area,
- wherein the divided areas of the first area and the second area are alternately arranged, and
- wherein a total area of the second area is larger than a total area of the first area, and the total number of the number of divisions of the first area and the number of divisions of the second area is five or greater.
Dependencies are inferred from the claim text.