Integrated circuits with high current capacity and methods for producing the same

An integrated circuit comprising:

• an ESD transistor, wherein the ESD transistor comprises;
• a source defined within a body isolation well;
• a drain defined within the body isolation well;
• a gate overlying the body isolation well between the source and the drain;
• and an isolation structure formed within the body isolation well, wherein the isolation structure sections the drain into a plurality of drain sections such that the plurality of drain sections are in electrical communication with the source through the body isolation well, the plurality of drain sections are equidistant from one gate, and wherein the isolation structure is electrically insulating;
• and a power source;
• a ground;
• and a protected device, wherein the protected device and the ESD transistor are connected in parallel between the power source and the ground.

A method of producing an integrated circuit comprising:

• forming an isolating structure within a body isolation well, wherein the isolation structure is electrically insulating;
• forming a source within the body isolation well, wherein the source is formed such that the isolating structure sections the source into a plurality of source sections;
• forming a drain within the body isolation well;
• forming a gate overlying body isolation well between the source and the drain, wherein the gate is formed such that one gate is adjacent to the plurality of source sections.