Back to results
US 10,121,770 B2Granted
Device with multiple, stacked light emitting devices
AssigneeKoninklijke Philips N.V.
InventorsHans-Helmut Bechtel, Erik Nelson, April Dawn Schricker
Life of this patent
Estimating the term…
Abstract
A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers.
Claims15
A device comprising:
- a first light emitting structure including a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region;
- a second light emitting structure including a second semiconductor light emitting layer disposed between a second n-type region and a second p-type region;
- and
- a non-III-nitride material separating the first and second light emitting structures, the non-III-nitride material comprising an adhesive attaching the first and second light emitting structures;
- the second semiconductor light emitting layer being disposed over the first semiconductor light emitting layer,
- wherein the non-III-nitride material separating the first and second light emitting structures comprises a wavelength converting material.
3 more elements
A device comprising:
- a growth substrate made of a non-III-nitride material and having a first surface and a second surface opposite the first surface;
- a first light emitting structure including a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region, the first semiconductor light emitting layer, the first n-type region, and the first p-type region being grown on the first surface of the growth substrate;
- and
- a second light emitting structure including a second semiconductor light emitting layer disposed between a second n-type region and a second p-type region, the second semiconductor light emitting layer, the second n-type region, and the second p-type region being grown on the second surface of the growth substrate.
1 more element
A method comprising:
- growing a first semiconductor structure comprising a first light emitting layer sandwiched between a first n-type region and a first p-type region on a first surface of a non-III-nitride growth substrate;
- and
- growing a second semiconductor structure comprising a second light emitting layer sandwiched between a second n-type region and a second p-type region on a second surface of the non-III-nitride growth substrate, the second surface being opposite the first surface.
Dependencies are inferred from the claim text.