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US 10,121,767 B2Granted
Semiconductor storage device and manufacturing method thereof
AssigneeToshiba Memory Corporation
InventorsMisa Sugimura, Akihiro Iida
Life of this patent
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Abstract
A semiconductor storage device of the present embodiments includes a substrate, a first semiconductor chip and a sealer. The substrate has wirings. The first semiconductor chip is connected to the wirings on the substrate. The sealer has a first surface, which does not face a top surface of the first semiconductor chip and is provided with a mark, and seals the first semiconductor chip.
Claims12
A semiconductor storage device being capable of being inserted to a socket of a host device, the semiconductor storage device comprising:
- a substrate comprising wiring, a first substrate section, and a second substrate section;
- a first semiconductor chip that is connected to the wiring on the second substrate section;
- a sealer that comprises a first surface, and a second surface and seals the first semiconductor chip, the first surface not facing a top surface of the first semiconductor chip, the second surface facing a top surface of the first semiconductor chip, the first surface being connected to the second surface and being shorter than the second surface in an inserting direction into the socket;
- and
- a mark being provided on the first surface of the sealer.
2 more elements
Dependencies are inferred from the claim text.