Semiconductor device and method of forming WLCSP

A method of making a semiconductor device, comprising:

• providing a first carrier;
• disposing a semiconductor substrate including a plurality of semiconductor die on the first carrier;
• forming a plurality of bumps over a first surface of the semiconductor die;
• forming an insulating layer over the first surface of the semiconductor die between the bumps;
• singulating the semiconductor substrate between the semiconductor die while maintaining position of the semiconductor die on the first carrier;
• expanding a space between the semiconductor die on the first carrier;
• disposing the semiconductor die onto a second carrier with the bumps oriented toward the second carrier while maintaining the expanded space on the first carrier;
• removing the first carrier;
• depositing an encapsulant over the semiconductor die and into the space between the semiconductor on the second carrier;
• and
• forming a channel through the encapsulant between the semiconductor die to separate the semiconductor die.

A method of making a semiconductor device, comprising:

• providing a plurality of semiconductor die with asymmetrical spacing between the semiconductor die;
• forming a plurality of bumps over a first surface of the semiconductor die;
• forming an insulating layer over the first surface of the semiconductor die between the bumps;
• disposing the semiconductor die on a dicing tape;
• expanding the dicing tape to impart movement of the semiconductor die and increase spacing between the semiconductor die, wherein the asymmetrical spacing between the semiconductor die compensates for non-linear expansion of the dicing tape;
• depositing an encapsulant over the semiconductor die and into the space between the semiconductor die;
• and
• forming a channel through the encapsulant between the semiconductor die.