Hetero-bipolar transistor and method for producing the same

A method of producing a semiconductor device, comprising steps of:

• growing a plurality of semiconductor layers to form a semiconductor stack on a semiconductor substrate;
• removing a periphery of the semiconductor stack;
• forming a first adhesive layer on the semiconductor stack after removing the periphery of the semiconductor stack;
• bonding a temporary support made of non-semiconductor material to the first adhesive layer;
• removing the semiconductor substrate from the semiconductor stack to expose a surface of the semiconductor stack;
• forming a second adhesive layer on the exposed surface of the semiconductor stack;
• bonding a support to the second adhesive layer;
• and
• removing the temporary support from the semiconductor stack,
• wherein the support bonded to the second adhesive layer has a thermal conductivity greater than thermal conductivities of the semiconductor layers forming the semiconductor stack, and
• wherein the step of forming the first adhesive layer includes a step of forming the first adhesive layer so as to cover a top of the semiconductor stack and a side of the semiconductor stack that is exposed by the step of removing the periphery of the semiconductor stack.

A method of producing a semiconductor device, comprising steps of:

• growing a plurality of semiconductor layers to form a semiconductor stack on a semiconductor substrate;
• forming a protective layer on the semiconductor stack;
• forming a first adhesive layer on the protective layer;
• bonding a temporary support made of non-semiconductor material to the first adhesive layer;
• removing the semiconductor substrate from the semiconductor stack to expose a surface of the semiconductor stack;
• forming a second adhesive layer on the exposed surface of the semiconductor stack;
• bonding a support to the second adhesive layer;
• removing the temporary support from the semiconductor stack;
• and
• removing the protective layer,
• wherein the support bonded to the second adhesive layer has a thermal conductivity greater than thermal conductivities of the semiconductor layers forming the semiconductor stack.