Advanced e-Fuse structure with hybrid metal controlled microstructure
AssigneeInternational Business Machines Corporation
InventorsDaniel C Edelstein, Chih-Chao Yang
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Abstract
A structure of an e-Fuse device in a semiconductor device is described. The e-Fuse device includes an anode region, a cathode region and a fuse element which interconnects the anode and cathode regions in a dielectric material on a first surface of a substrate. The fuse element has a smaller cross section and a higher aspect ratio than the anode and cathode regions. The anode and cathode regions are comprised of a large grained copper layer and an aspect ratio reducing layer, and the fuse element is comprised of a fine grained copper structure.
Claims15
An e-Fuse device comprising:
- an anode region, a cathode region and a fuse element region which interconnects the anode and cathode regions in a trench in a dielectric material on a first surface of a substrate, wherein the fuse element region has a smaller cross section and a higher aspect ratio than the anode and cathode regions;
- an anode in the anode region;
- a cathode in the cathode region;
- a fuse element in the fuse element region;
- and
- wherein the anode and cathode are comprised of a large grained copper layer and
- an aspect ratio reducing layer, and the fuse element is comprised of a fine grained copper structure, where respective aspect ratios of anode, cathode and fuse element regions are respective ratios of a height of the trench divided by a width of the trench and the aspect ratio reducing layer reduces the aspect ratios of portions of the trenches in the anode and cathode regions used for the large grained copper layer;
- and
- wherein the aspect ratio reducing layer fills a bottom portion of the anode and cathode regions, wherein the bottom portion comprises 30-50 percent of the anode and cathode regions and is absent from an upper portion of the anode and cathode regions, wherein the upper portion comprises a large grain copper layer of 50 to 70 percent of the anode and cathode regions and the aspect ratio reducing layer is absent from the trench in the fuse element region.
Dependencies are inferred from the claim text.