Semiconductor constructions

A construction, comprising:

• a semiconductor substrate comprising a first side and a second side in opposing relation to the first side;
• and
• a through-substrate interconnect embedded in a hole penetrating the semiconductor substrate, the through-substrate interconnect comprising a first conductive core formed on the first side, a second conductive core formed on the second side, a first conductive barrier formed between the first conductive core and the second conductive core, a second conductive barrier lining between a portion of a side surface of the hole and a side surface of the first conductive core and a third conductive barrier lining between a remaining portion of the side surface of the hole and a side surface of the second conductive core;
• wherein the first conductive barrier and the second conductive barrier are continuously formed as a single film;
• and
• wherein the third conductive barrier is formed separately from the single film.

A construction, comprising:

• a semiconductor substrate comprising a first side and a second side in opposing relation to the first side;
• and
• a through-substrate interconnect comprising a first part and a second part coupled in series between the first side and the second side to penetrate the semiconductor substrate;
• wherein the first part elongates from the first side to the second side and comprises a first conductive core and a first conductive barrier covering a side surface of the first conductive core and a bottom surface, which faces the second part, of the first conductive core;
• wherein the second part elongates from the second side to the first side and comprises a second conductive core and a second conductive barrier covering at least a side surface of the second conductive core;
• and
• wherein the second conductive barrier covers both a portion of a bottom surface, which faces the first part, of the second conductive core and another portion of the bottom surface, which does not face the first part, of the second conductive core.

A construction, comprising:

• a semiconductor substrate comprising a first side and a second side in opposing relation to the first side;
• and
• a through-substrate interconnect embedded in a hole penetrating the semiconductor substrate, the through-substrate interconnect comprising a first conductive core formed on the first side, a second conductive core formed on the second side, a first conductive barrier formed between the first conductive core and the second conductive core, a second conductive barrier lining between a portion of a side surface of the hole and a side surface of the first conductive core and a third conductive barrier lining between a remaining portion of the side surface of the hole and a side surface of the second conductive core;
• and
• wherein the through-substrate interconnect further comprises a fourth conductive barrier formed on the first conductive barrier between the first conductive core and the second conductive core.