Method of designing a layout of a semiconductor device, and a semiconductor device including a fin

A semiconductor device comprising:

• active fins each extending in a first direction, wherein the active fins are arranged along a second direction crossing the first direction on a substrate;
• gate lines each extending in the second direction, wherein the gate lines are arranged along the first direction on the active fins;
• first contact plugs, wherein at least one of the first contact plugs is positioned on a respective one of the active fins;
• first vias, wherein each of the first vias is formed in a respective one of the first contact plugs;
• and
• first conductive lines, wherein at least one of the first conductive lines overlaps a respective one of the first vias along a third direction orthogonal to the first and second directions,
• wherein a first distance between two first active fins of the active fins on which a first gate line of the gate lines is formed is at least as long as a predetermined distance, and a second distance from a second active fin of the active fins on which the first gate line is formed to each of the first active fins is less than the predetermined distance, wherein the second active fin is positioned between the two first active fins along the second direction, and
• wherein the second active fin is spaced apart from the first contact plugs to not overlap the first contact plugs along the third direction orthogonal to the first and second directions.

A semiconductor device comprising:

• a plurality of active fins extending in a first direction, wherein the plurality of active fins includes a first active fin, a second active fin and a third active fin sequentially arranged along a second direction crossing the first direction;
• a plurality of conductive lines extending in the first direction;
• a plurality of gate lines extending in the second direction,
• wherein a first gate line of the plurality of gate lines crosses the first, second and third active fins,
• wherein a first portion of the first gate line extending from the first active fin across the second and third active fins is at least as long as a predetermined distance, and
• wherein a distance between the second and third active fins is less than the predetermined distance;
• and
• a plurality of contact plugs including a via formed in each of the contact plugs,
• wherein a first contact plug of the plurality of contact plugs is formed on a conductive line of the plurality of conductive lines and a second portion of the first gate line on an opposite side of the first active fin from the first portion of the first gate line.