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US 10,121,728 B2Granted
Thin film capacitor and semiconductor device with improved heat dissipation
AssigneeTDK Corporation
InventorsMasahiro Yamaki, Hitoshi Saita
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Abstract
The present invention provides a thin film capacitor including a first electrode layer, a second electrode layer, and a dielectric layer provided between the first electrode layer and the second electrode layer, wherein a ratio (S/S0) of a surface area S of a surface of the first electrode layer on an opposite side to the dielectric layer to a projected area S0 in a thickness direction of the first electrode layer is 1.01 to 5.00.
Claims5
A thin film capacitor comprising:
- a first electrode layer having an upper surface and a lower surface, the upper surface being a flat surface;
- a second electrode layer;
- and
- a dielectric layer provided between the upper surface of the first electrode layer and the second electrode layer, with the upper surface of the first electrode layer facing the dielectric layer and the lower surface of the first electrode layer facing away from the dielectric layer,
- wherein the lower surface of the first electrode layer has a surface roughness selected so that a ratio (S/S0) of a surface area S of the lower surface of the first electrode layer to a projected area S0 in a thickness direction of the first electrode layer is 1.01 to 5.00.
2 more elements
Dependencies are inferred from the claim text.