Accelerated failure test of coupled device structures under direct current bias

A method of conducting a reliability test on a device having a layered structure and at least two electrodes the method comprising the steps of:

• locating an electron transparent cross-sectional portion of the device in a holder to form an electrical circuit including the cross-sectional portion of the device via portions of at least two electrodes in the cross-sectional portion of the device;
• transmitting a direct current bias voltage from the holder to the cross-sectional portion of the device via the at least two electrodes of the device;
• and
• observing and quantifying the microstructural changes of the cross-sectional portion of the device located in the holder
• depositing a protection layer on a surface on the device where the electrodes are located;
• drilling holes through the protection layer to access each of the electrodes;
• depositing a conductive material in the drilled holes to form protruding outreach electrodes for the device;
• and
• removing an electron transparent cross-sectional portion of an area of interest in the device including at least a portion of two of said electrodes and corresponding protruding outreach electrodes.