Selective deposition of aluminum and nitrogen containing material

A process for selectively forming AlN on a first surface of a substrate relative to a second different surface of the same substrate, the process comprising a super-cycle comprising:

• a selective deposition sub-cycle comprising:
• alternately and sequentially contacting the substrate with a first vapor phase precursor comprising aluminum and a second vapor phase precursor comprising nitrogen such that the AlN is deposited on the first surface of the substrate relative to the second different surface of the same substrate with a selectivity greater than about 5%;
• and
• an atomic layer etch sub-cycle comprising:
• alternately and sequentially contacting the substrate with a first vapor phase halide etch reactant and a second vapor phase etch reactant comprising aluminum.