Method of manufacturing a semiconductor device

A method comprising:

• placing a semiconductor device in a metallization system, the semiconductor device comprising a low-k dielectric layer;
• in a first module of the metallization system:
• exposing the low-k dielectric layer to an ultraviolet (UV) light;
• removing moisture and/or residual gas from the low-k dielectric layer;
• and
• pre-cleaning the semiconductor device, wherein the exposing, the removing, and the pre-cleaning are completed without an air break in the first module;
• in a second module of the metallization system, depositing a barrier layer on the low-k dielectric layer;
• in the first module of the metallization system, purifying the barrier layer using a UV treatment;
• and
• in a third module of the metallization system, depositing a seed layer on the barrier layer.

A method comprising:

• depositing a dielectric layer on a workpiece;
• etching openings in the dielectric layer;
• ashing and cleaning the dielectric layer;
• placing the workpiece in a metallization system;
• at least partially curing the dielectric layer in a UV cure module of the metallization system;
• performing a K value recovery process in the UV cure module after the at least partially curing the dielectric layer in the UV cure module;
• depositing a barrier layer on the dielectric layer in a barrier module of the metallization system;
• and
• depositing a seed layer on the barrier layer in a seed module of the metallization system.