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US 10,121,691 B2Granted
Semiconductor substrate arrangements and a method for forming a semiconductor substrate arrangement
AssigneeInfineon Technologies AG
InventorsPeter Irsigler, Jens Peter Konrath, Hans-Joachim Schulze
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Abstract
A semiconductor substrate arrangement includes a carrier wafer and a plurality of semiconductor substrate pieces fixed to the carrier wafer and distributed laterally over the carrier wafer. The semiconductor substrate pieces of the plurality of semiconductor substrate pieces comprise a hexagonal shape.
Claims18
A semiconductor substrate arrangement comprising:
- a carrier wafer;
- a plurality of semiconductor substrate pieces fixed to a front side of the carrier wafer, the plurality of semiconductor substrate pieces having a maximal lateral dimension, wherein the carrier wafer comprises a plurality of trenches in the front side of the carrier wafer,
- wherein:
- each distance between neighboring trenches of the plurality of trenches is less than the maximal lateral dimension of the semiconductor substrate pieces of the plurality of semiconductor substrate pieces;
- and
- the plurality of semiconductor substrate pieces are a plurality of wide band-gap semiconductor substrate pieces;
- and
- a grown semiconductor layer covering the semiconductor substrate pieces of the plurality of semiconductor substrate pieces and bridging gaps between neighboring edges of semiconductor substrate pieces of the plurality of semiconductor substrate pieces.
5 more elements
A semiconductor substrate arrangement comprising:
- a carrier wafer;
- a plurality of semiconductor substrate pieces fixed to the carrier wafer, wherein the carrier wafer comprises at least one of the group of graphite and carbon;
- and
- a grown semiconductor layer covering the semiconductor substrate pieces of the plurality of semiconductor substrate pieces and bridging gaps between neighboring edges of semiconductor substrate pieces of the plurality of semiconductor substrate pieces;
- wherein:
- the carrier wafer comprises a passivation layer covering at least a part of the carrier wafer, wherein the passivation layer comprises boron nitride;
- and
- the plurality of semiconductor substrate pieces are a plurality of wide band-gap semiconductor substrate pieces.
5 more elements
A semiconductor substrate arrangement comprising:
- a carrier wafer;
- a plurality of semiconductor substrate pieces fixed to a front side of the carrier wafer, wherein the carrier wafer comprises a plurality of trenches at the front side;
- and
- a grown semiconductor layer covering the semiconductor substrate pieces of the plurality of semiconductor substrate pieces and bridging gaps between neighboring edges of semiconductor substrate pieces of the plurality of semiconductor substrate pieces;
- wherein neighboring trenches of the plurality of trenches comprise a distance to each other of less than a maximal lateral dimension of the semiconductor substrate pieces of the plurality of semiconductor substrate pieces.
2 more elements
Dependencies are inferred from the claim text.