Method of manufacturing a semiconductor component and semiconductor component
AssigneeInfineon Technologies AG
InventorsGeorg Meyer-Berg, Edward Fuergut, Joachim Mahler
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Abstract
Various embodiments provide method of manufacturing a semiconductor component, wherein the method comprises providing a layer stack comprising a carrier and a thinned wafer comprising a metallization layer on one side, wherein the thinned wafer is placed on a first side of the carrier; forming an encapsulation encapsulating the layer stack at least partially; and subsequently thinning the carrier from a second side of the carrier, wherein the second side is opposite to the first side of the carrier.
Claims14
A method of manufacturing a semiconductor component, the method comprising:
- providing a layer stack comprising a carrier and a thinned wafer comprising a metallization layer on one side,
- wherein the thinned wafer is placed on a first side of the carrier;
- forming an encapsulation encapsulating the layer stack at least partially;
- and
- subsequently thinning the carrier from a second side of the carrier, wherein the second side is opposite to the first side of the carrier;
- wherein the method further comprises:
- dicing the layer stack before forming the encapsulation.
A method of manufacturing a semiconductor component, the method comprising:
- providing a layer stack comprising a carrier and a thinned wafer comprising a metallization layer on one side,
- wherein the thinned wafer is placed on a first side of the carrier;
- forming an encapsulation encapsulating the layer stack at least partially;
- and
- subsequently thinning the carrier from a second side of the carrier, wherein the second side is opposite to the first side of the carrier,
- wherein the layer stack comprises an adhesive layer arranged between the thinned wafer and the carrier, and
- wherein the adhesive layer is used as a stop layer in the subsequently thinning.
A method of manufacturing a semiconductor component, the method comprising:
- providing a layer stack comprising a carrier and a thinned wafer comprising a metallization layer on one side,
- wherein the thinned wafer is placed on a first side of the carrier;
- forming an encapsulation encapsulating the layer stack at least partially;
- and
- subsequently thinning the carrier from a second side of the carrier, wherein the second side is opposite to the first side of the carrier;
- wherein the method further comprises:
- placing a further carrier on the side of the metallization layer before forming the stacked layer.
Dependencies are inferred from the claim text.