Ion implantation method and ion implantation apparatus

An ion implantation method for scanning an ion beam reciprocally in an x direction and moving a wafer reciprocally in a y direction to implant ions into the wafer, the method comprising:

• irradiating a first wafer arranged to meet a predetermined plane channeling condition with the ion beam and measuring resistance of the first wafer irradiated with the ion beam;
• irradiating a second wafer arranged to meet a predetermined axial channeling condition with the ion beam and measuring resistance of the second wafer irradiated with the ion beam;
• and adjusting an implant angle distribution of the ion beam relative to the wafers in the x direction and in the y direction by using results of measuring the resistance of the first and second wafers,
• wherein the implant angle distribution is adjusted independently in the x direction and in the y direction by using two or more lens devices for converging or diverging the ion beam by applying at least one of an electric field and a magnetic field.