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US 10,121,660 B2Granted
Method for fabricating semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsSo Young Lee, Hyun Su Kim, Jong Won Hong
Life of this patent
Estimating the term…
Abstract
A method of fabricating a semiconductor device includes forming a metal film including Cu on a substrate, forming a protective film on the metal film, forming a hard mask including TaOx, where x is 2.0 to 2.5, on the protective film, forming a hard mask pattern by patterning the hard mask, and forming a metal wiring by patterning the metal film, using the hard mask pattern as an etching mask.
Claims19
A method of fabricating a semiconductor device, the method comprising:
- forming a metal film including Cu on a substrate;
- forming a protective film on the metal film;
- forming a hard mask on the protective film, the hard mask including TaOx, where x is 2.0 to 2.5, and a ratio of a thickness of the hard mask to a thickness of the metal film is 1.0 or more, wherein forming the hard mask includes forming the hard mask at an alignment thickness T or less, the alignment thickness T being expressed by the following formula:
- T
- =
- λ
- 2
-
- π
-
-
- k
- <
- Formula
- >
- where symbol λ is a wavelength of the light source, and symbol k is an extinction coefficient of the hard mask;
- forming a hard mask pattern by patterning the hard mask;
- and
- forming a metal wiring by patterning the metal film, using the hard mask pattern as an etching mask.
16 more elements
A method of fabricating a semiconductor device, the method comprising:
- forming a first interlayer insulating film and a first wiring embedded in the first interlayer insulating film, on a substrate;
- forming a metal film on the first interlayer insulating film and the first wiring;
- forming a first protective film on the metal film;
- forming a hard mask including at least one of TaOx, where, x is 2.0 to 2.5, tungsten oxide, cobalt oxide, nickel oxide, platinum oxide, aluminum oxide, and titanium oxide on the first protective film;
- forming a hard mask pattern by patterning the hard mask, and the hard mask pattern being aligned to overlap the first wiring by using a light source having a wavelength of 500 nm to 700 nm;
- and
- forming a second wiring electrically coupled to the first wiring, by patterning the metal film using the hard mask pattern as an etching mask.
4 more elements
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate having an alignment key including a metal formed therein;
- forming a metal film on the substrate and covering the alignment key, the metal film including a same metal as the alignment key;
- forming a protective film on the metal film;
- forming a hard mask on the protective film such that a ratio of a thickness of the hard mask to a thickness of the metal film is 1.0 or more, the hard mask including at least one of tantalum oxide, tungsten oxide, cobalt oxide, nickel oxide, platinum oxide, aluminum oxide, and titanium oxide, wherein a content of oxygen in the at least one of tantalum oxide, tungsten oxide, cobalt oxide, nickel oxide, platinum oxide, aluminum oxide, and titanium oxide is selected to provide an extinction coefficient value (k) of the hard mask such that the alignment key is detectable with a light source having a wavelength of 500 nm to 700 nm and such that a density ratio (d) of the hard mask with respect to the metal of the metal film is 1 or greater;
- forming a photomask on the hard mask, detecting the alignment key using the light source having the wavelength of 500 nm to 700 nm, and patterning the photomask based on a detected position of the alignment key to form a photomask pattern;
- etching the hard mask using the photomask pattern as an etching mask to form a hard mask pattern;
- and
- patterning the metal film, using the hard mask pattern as an etching mask.
5 more elements
Dependencies are inferred from the claim text.