Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation
AssigneeArizona Board of Regents on behalf of Arizona State University
InventorsFranz A. Koeck, Srabanti Chowdhury, Robert J Nemanich
Life of this patent
Estimating the term…
Abstract
Apparatuses and methods are provided for manufacturing diamond electronic devices. The method includes at least one of the following acts: positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor; controlling temperature of the substrate by manipulating microwave power, chamber pressure, and gas flow rates of the PECVD reactor; and growing phosphorus doped diamond layer on the substrate using a pulsed deposition comprising a growth cycle and a cooling cycle.
Claims26
A method for manufacturing diamond electronic devices, the method comprising:
- positioning a single crystal substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor;
- performing a deposition process, the deposition process comprising:
- i) establishing a plasma in the PECVD reactor;
- ii) stabilizing a temperature of the single crystal substrate at a first temperature between 900° C. and 1200° C. by controlling at least one of a microwave power of the plasma, a chamber pressure in the PECVD reactor, and a gas flow to the PECVD reactor;
- iii) epitaxially growing phosphorus doped diamond on the single crystal substrate at the first temperature for a growth period of greater than or equal to 2 minutes and less than 5 minutes;
- and
- iv) following the growth period, shutting down the plasma to cool the single crystal substrate below a second temperature for a cooling period, wherein the second temperature is 600° C.;
- and then
- v) iterating at least steps i) through iv) of the deposition process to deposit a phosphorus doped diamond layer on the single crystal substrate.
A method for manufacturing diamond electronic devices, the method comprising:
- providing a plasma enhanced chemical vapor deposition (PECVD) reactor comprising:
- a base and a sample stage holder disposed on the base, wherein the sample stage holder comprises a sample holder;
- adjusting a thermal interface between the base and the sample stage holder;
- positioning a substrate in the sample holder in the PECVD reactor;
- and growing phosphorus doped diamond layer on the substrate using a deposition process comprising growth periods separated by cooling periods, wherein at least one growth period lasts for greater than or equal to 2 minutes and less than 5 minutes, and a plasma in the PECVD reactor is off during the cooling periods, wherein a temperature during at least one of the cooling periods is 600° C. or lower.
A method for manufacturing diamond electronic devices, the method comprising:
- positioning a substrate in a plasma enhanced chemical vapor deposition (PECVD) reactor;
- performing a deposition process comprising:
- i) during a growth pulse of greater than 2 minutes and less than 5 minutes, growing phosphorus doped diamond on the substrate at a first temperature;
- ii) after the growth pulse, cooling the substrate to a second temperature that is less than the first temperature for a cooling period;
- and then
- iterating at least steps i) and ii) of the deposition process to form a phosphorus doped diamond layer on the substrate, wherein during iteration of the deposition process, a temperature profile of the growth pulse is adjusted to control a phosphorous concentration over a depth of the phosphorus doped diamond layer.
Dependencies are inferred from the claim text.