Method for manufacturing semiconductor device, substrate-processing apparatus, and recording medium

A method for manufacturing a semiconductor device, comprising:

• providing a substrate with an oxide film formed on a surface thereof;
• pre-processing a surface of the oxide film;
• forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed;
• and
• after forming the nitride film containing carbon, heat-processing the substrate under a temperature higher than a temperature of the substrate in the forming the nitride film containing carbon,
• wherein the forming the nitride film containing carbon is performed by either:
• (a) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
• supplying a precursor gas to the substrate;
• supplying a carbon-containing gas to the substrate;
• and
• supplying a nitrogen-containing gas to the substrate, or
• (b) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
• supplying a precursor gas to the substrate;
• and
• supplying a gas containing carbon and nitrogen to the substrate, or
• (c) performing a cycle a predetermined number of times, the cycle including non-simultaneously performing:
• supplying a precursor gas containing carbon to the substrate;
• and
• supplying a nitrogen-containing gas to the substrate;
• wherein a concave portion is formed in the surface of the substrate, and the oxide film is formed on an inner surface of the concave portion,
• wherein, in the forming the nitride film containing carbon, the nitride film containing carbon is formed to fill an interior of the concave portion in which the oxide film is formed.