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US 10,121,652 B1Granted
Formation of metal oxide layer
AssigneeNXP USA, Inc.
InventorRama I. Hegde
Life of this patent
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Abstract
A method for forming a metal oxide layer on a wafer. In some embodiments, the method includes forming a layer of a metal oxyhalide on a wafer followed by an anneal of the wafer which removes halogens from the layer to form a layer of metal oxide. A semiconductor device may be formed from the wafer.
Claims20
A method comprising:
- forming a layer of metal oxyhalide on a wafer;
- after the forming, annealing the wafer to remove halogens from the layer;
- forming a semiconductor device from the wafer.
A method comprising:
- forming a layer of metal oxyhalide on a wafer in a chamber, the forming a layer comprising performing a sequence of operations a plurality of times, the sequence of operations comprising:
- flowing a metal oxyhalide material in a gaseous form into the chamber with the wafer to deposit metal oxyhalide on the wafer;
- after the flowing, purging the chamber with an inert gas;
- after the forming the layer, annealing the wafer to remove halogens from the layer, wherein after the annealing, the layer includes a metal oxide;
- forming a semiconductor device with the layer including the metal oxide.
2 more elements
Dependencies are inferred from the claim text.