Method of manufacturing semiconductor device
AssigneeHitachi Kokusai Electric Inc.
InventorsArito Ogawa, Shin Hiyama
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Abstract
A technique capable of forming a side wall of a gate electrode having high resistance-to-etching and low leakage current is provided. A method of manufacturing a semiconductor device according to the technique includes: (a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall; and (b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space.
Claims11
A method of manufacturing a semiconductor device, comprising:
- (a) loading a substrate into a processing space in a process vessel, the substrate having thereon a gate electrode and an insulating film formed on a side surface of the gate electrode as a side wall;
- (b) forming an etching-resistant film containing carbon and nitrogen on a surface of the insulating film by supplying a carbon-containing gas into the processing space;
- and
- (c) supplying a nitrogen-containing gas into the processing space after performing (b).
Dependencies are inferred from the claim text.