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AssigneeCentral Glass Company, Limited
InventorsAkiou Kikuchi, Masanori Watari, Kenji Kameda, Shin Hiyama, Yasutoshi Tsubota
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An etching fault is suppressed by use of an etching gas containing iodine heptafluoride. Provided is an attached substance removing method of removing an attached substance containing an iodine oxide attached to a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas. Also provided is a dry etching method, including the steps of supplying an etching gas containing an iodine-containing gas into a chamber to perform etching on a surface of a substrate; and after the etching is performed on the surface of the substrate, removing an attached substance containing an iodine oxide attached to a component included in the chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas.
An attached substance removing method of removing an attached substance containing an iodine oxide attached to a surface of a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas in a plasma free state.
A dry etching method, comprising the steps of:
An attached substance removing method of removing an attached substance containing an iodine compound attached to a surface of a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing a fluorine-containing gas not containing iodine in a plasma free state.
A dry etching method, comprising:
An attached substance removing method of removing an attached substance containing an iodine oxide attached to a surface of a component included in a chamber or a surface of a pipe connected with the chamber by use of a cleaning gas containing IF7.
Dependencies are inferred from the claim text.