Large dynamic range RF voltage sensor and method for voltage mode RF bias application of plasma processing systems

A voltage sensor of a substrate processing system, the voltage sensor comprising:

• a multi-divider circuit configured to receive a radio frequency (RF) signal, wherein the received RF signal is indicative of a RF voltage provided at a substrate in a plasma chamber of the substrate processing system, wherein the multi-divider circuit comprises a first divider and a second divider, wherein the first divider corresponds to a first channel and is configured to (i) receive the RF signal from an electrode, and (ii) output a first reduced voltage based on the received RF signal, wherein the second divider corresponds to a second channel and is configured to (i) receive the RF signal from the electrode, and (ii) output a second reduced voltage based on the received RF signal, and wherein the first reduced voltage and the second reduced voltage are less than the RF voltage;
• a clamping circuit configured to clamp the first reduced voltage to a first predetermined voltage when (i) the RF voltage is greater than a second predetermined voltage, or (ii) the first reduced voltage is greater than a third predetermined voltage;
• a first output of the first channel configured to output a first output signal based on the first reduced voltage and while the received RF signal is in at least one of a first voltage range or a second voltage range, wherein the second voltage range is higher than the first voltage range, and wherein the first predetermined voltage is based on a maximum value of the first voltage range;
• and
• a second output of the second channel configured to output a second output signal based on the second reduced voltage and while the received RF signal is in the at least one of the first voltage range or the second voltage range.